| PART |
Description |
Maker |
| BC550C BC549B BC549B-D BC549C BC550B |
TRANSISTOR|BJT|NPN|45VV(BR)CEO|100MAI(C)|TO-92
Low Noise Transistors NPN Silicon(硅NPN低噪声晶体管) 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Low Noise Transistor NPN Silicon(30V硅NPN低噪声晶体管) 低噪声晶体管NPN硅（30V的硅npn型低噪声晶体管）
|
ON Semiconductor
http://
|
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| 2N1890 JAN2N1890S JAN2N1711S JANTX2N1711 |
NPN LOW POWER SILICON TRANSISTOR
NPN Transistor
500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
|
Microsemi Corporation
MICROSEMI CORP-LAWRENCE
|
| JANS2N3498L JANS2N3498 JANS2N3500L JANS2N3501L JAN |
NPN SILICON TRANSISTOR
NPN SILICON TRANSISTOR 300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
NPN Transistor
500 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
|
Microsemi, Corp.
Honeywell International, Inc.
MICROSEMI[Microsemi Corporation]
MICROSEMI CORP-LAWRENCE
|
| 2SD1692 2SD1692L 2SD1692K |
NPN SILICON DARLINGTON TRANSISTOR
From old datasheet system
NPN SILICON POWER TRANSISTOR
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁| 3A条一（c）|26
|
NEC Corp.
NEC, Corp.
|
| 2SD1572 |
Silicon NPN Triple Diffused(涓???╂?NPN?朵?绠?
8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Hitachi,Ltd.
|
| 151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82
晶体管|晶体管|叩| 100V的五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 180V五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管| npn型| 140伏特五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 50V五（巴西）总裁| 6A条一c）|2
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一c）| STR-5/16
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五（巴西）总裁|甲一（c）| STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五（巴西）总裁|甲一（c）| STR-5/16
|
Samsung Semiconductor Co., Ltd.
Molex, Inc.
Intel, Corp.
|
| CMLM2205 |
MULTI DISCRETE MODULESURFACE MOUNT SILICON SWITCHING NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE 600 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Central Semiconductor, Corp.
|
| BC637L34Z BC637D26Z |
NPN Epitaxial Silicon Transistor 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Tape & Reel 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
|
| BD159 BD157 BD158 BD157STU BD158STU BD159STU |
Low Power Fast Switching Output Stages
NPN Epitxial Silicon Transistor
NPN Epitaxial Silicon Transistor
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| JANS2N3700S JANTXV2N3057A JANTX2N3057A JANS2N3057A |
LOW POWER NPN SILICON TRANSISTOR
LOW POWER NPN SILICON TRANSISTOR 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
NPN Transistor
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
